DMG2302U n-channel enhancement mode mosfet features ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020d ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss 20 v gate-source voltage v gss 8 v continuous drain current (note 3) steady state t a = 25c t a = 70c i d 4.2 3.4 a pulsed drain current (note 4) i dm 27 a thermal characteristics characteristic symbol value unit power dissipation (note 3) t a = 25c t a = 70c p d 0.8 0.5 w thermal resistance, junction to ambient @t a = 25c r ja 156 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 1. no purposefully added lead. 2. device mounted on fr-4 pcb, with minimum recommended pad layout. 3. repetitive rating, pulse width limited by junction temperature. top view internal schematic top view d g s source gate drain 1 of 2 sales@zpsemi.com www.zpsemi.com
electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) drain-source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 10 a zero gate voltage drain current tj = 25c i dss - - 1.0 a v ds = 20v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 8v, v ds = 0v on characteristics (note 5) gate threshold voltage v gs ( th ) 0.4 - 1.0 v v ds = v gs , i d = 50 a static drain-source on-resistance r ds (on) - - 90 120 m v gs = 4.5v, i d = 3.6a v gs = 2.5v, i d = 3.1a forward transfer admittance |y fs | - 13 - s v ds = 5v, i d = 3.6a diode forward voltage v sd - 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 6) input capacitance c iss - 594.3 - pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 64.5 - pf reverse transfer capacitance c rss - 57.7 - pf gate resistance r g - 1.5 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 7.0 - nc v gs = 4.5v, v ds = 10v, i d = 3.6a gate-source charge q g s - 0.9 - nc gate-drain charge q g d - 1.4 - nc turn-on delay time t d ( on ) - 7.4 - ns v dd = 10v, v gs = 4.5v, r l = 2.78 ? , r g = 1.0 ? turn-on rise time t r - 9.8 - ns turn-off delay time t d ( off ) - 28.1 - ns turn-off fall time t f - 6.7 - ns notes: 4. short duration pulse test used to minimize self-heating effect. 5. guaranteed by design. not subject to production testing. DMG2302U n-channel enhancement mode mosfet 2 of 2 sales@zpsemi.com www.zpsemi.com
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